Product Cross
CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

SOD-123FL package power ESD

Small signal SOT-723 new package

650V Super Junction N-Channel MOSFET

DFN1006-3L Package Small Signal Device

N+P Dual 30V Trench MOSFET for Fan Control

Optimization Design of Rectifier Bridge —— New Package GBU-L

JC

SGT N80-85V Power MOSFET

DFN2510 & DF0603 Package ESD Protection Series

IGBT Fast Series
About Us
Company History Honor Compliance Newpros
Products
Automotive Rectifier Protection Diode Small Signal Mosfet IGBT Module SiC 4/5″wafer 6″wafer Integrated circuit
Application
Automotive Clean Energy Industrial Power Supply Home Appliance Security Smart Meter Telecommunication
Quality
Technical Resources Quality Document Reliability Test PCN/EOL Event
Investment
Overview Reports Stock market GDR OFFERING
Follow Us
Yangjie Technology SZ300373

11.88

▼RMB
2023-03-24 15:59:10

Tel： 400 106 0780(8:00~12:00 13:30~17:30)

E-mail： yangjie@21yangjie.com

Address： 6 Heye West Road, Hanjiang District, Yangzhou

WeChat QR code

©2023 Yangzhou Yangjie Electronic Technology Co.,Ltd. 苏ICP备12043831号-1   苏公网安备 32100302010286号
Powered by SE
亚新官方网站 | 安博网页版 | 安博·体育 | 亚新官网(中国)股份有限公司官网 | 安博·体育 | 亚新(中国)股份有限公司官网 | 安博手机网页版登录入口 | 亚新平台 | 安博手机网页版登录入口 |